Effect of concentration of complexing agent (tartaric acid) on spray-deposited Bi2S3 films

被引:19
作者
Gadakh, SR [1 ]
Bhosale, CH [1 ]
机构
[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India
关键词
thin films; semiconductors; chemical synthesis; electron microscopy; X-ray diffraction;
D O I
10.1016/S0025-5408(00)00312-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Bi2S3 thin films were prepared without complexing agent and with different concentrations of tartaric acid as a complexing agent by a spray pyrolysis technique. The effect of concentration of the complexing agent on the properties of Bi2S3 thin films was studied by characterizing the films by X-ray diffraction, scanning electron microscopy, optical absorption, and dark electrical resistivity measurement techniques. These studies revealed that all films were polycrystalline. The band gap energy for films grown without complexing agent was observed to be 1.72 eV. However, the band gap energy for different concentrations of complexing agent was observed to be 2.0 eV. The electrical resistivity of the films with complexing agent was higher than that of the film prepared without complexing agent. The electrical resistivity increased with increasing concentration of complexing agent. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1097 / 1106
页数:10
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