CVD of metals using alcohols and metal acetylacetonates, Part II:: Role of solvent and characterization of metal films made by pulsed spray evaporation CVD

被引:35
作者
Premkumar, Peter Antony
Bahlawane, Naoufal
Reiss, Guenter
Kohse-Hoinghaus, Katharina
机构
[1] Univ Bielefeld, Fak Chem, D-33615 Bielefeld, Germany
[2] Univ Bielefeld, Fak Phys, D-33615 Bielefeld, Germany
关键词
acetylacetonates; alcohols; metal films; pulsed CVD; SEM; XRD;
D O I
10.1002/cvde.200606573
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Starting from their corresponding acetylacetonate complexes, nickel, copper, and cobalt thin films are deposited in a hydrogen-free atmosphere using CVD. The investigated pulsed spray evaporation (PSE) CVD process uses precursors dissolved in an organic solvent as the feedstock. This paper reports on the major role of the solvent for the growth of metal films. Alcohol solvents such as methanol, ethanol, and n-propanol enabled the growth of metallic films, while nonalcohol solvents such as tetrahydrofuran and n-butyl acrylate failed. Higher alcohols tend to result in higher growth rates; however, they present a limited solubility of the acetylacetonate complexes. Metal films grow, starting at 493 K, on glass and other substrates with no incubation time, and the obtained films, with thicknesses below 30 nm, present a smooth morphology. Phase analysis with X-ray diffraction (XRD) reveals the hexagonal polycrystalline structure of Ni and Co, and the cubic structure of Cu.
引用
收藏
页码:227 / 231
页数:5
相关论文
共 31 条
[1]   Nanoparticles of Ag, Au, Pd, and Cu produced by alcohol reduction of the salts [J].
Ayyappan, S ;
Gopalan, RS ;
Subbanna, GN ;
Rao, CNR .
JOURNAL OF MATERIALS RESEARCH, 1997, 12 (02) :398-401
[2]  
BAHLAWANE N, 2006, Patent No. 1020060330374
[3]   Mechanism of Ni film CVD with a Ni(ktfaa)2 precursor on a copper substrate [J].
Bakovets, VV ;
Mitkin, LN ;
Gelfond, NV .
CHEMICAL VAPOR DEPOSITION, 2005, 11 (02) :112-117
[4]   Alcohol-assisted growth of copper CVD films [J].
Borgharkar, NS ;
Griffin, GL ;
James, A ;
Maverick, AW .
THIN SOLID FILMS, 1998, 320 (01) :86-94
[5]   Chemical vapor deposition of metallic thin films using homonuclear and heteronuclear metal carbonyls [J].
Boyd, EP ;
Ketchum, DR ;
Deng, HB ;
Shore, SG .
CHEMISTRY OF MATERIALS, 1997, 9 (05) :1154-1158
[6]   Structural characterization of cobalt thin films grown by metal-organic CVD [J].
Chioncel, MF ;
Haycock, PW .
CHEMICAL VAPOR DEPOSITION, 2005, 11 (05) :235-243
[7]   OMCVD OF COBALT AND COBALT SILICIDE [J].
DORMANS, GJM ;
MEEKES, GJBM ;
STARING, EGJ .
JOURNAL OF CRYSTAL GROWTH, 1991, 114 (03) :364-372
[8]   TAILORED-ORGANOMETALLICS AS PRECURSORS FOR THE CHEMICAL VAPOR-DEPOSITION OF HIGH-PURITY PALLADIUM AND PLATINUM THIN-FILMS [J].
GOZUM, JE ;
POLLINA, DM ;
JENSEN, JA ;
GIROLAMI, GS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1988, 110 (08) :2688-2689
[9]   ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF COBALT AND FORMATION OF COBALT DISILICIDE [J].
GROSS, ME ;
KRANZ, KS ;
BRASEN, D ;
LUFTMAN, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (05) :1548-1552
[10]   LOW-TEMPERATURE VAPOR-DEPOSITION OF HIGH-PURITY IRIDIUM COATINGS FROM CYCLOOCTADIENE COMPLEXES OF IRIDIUM - SYNTHESIS OF A NOVEL LIQUID IRIDIUM CHEMICAL VAPOR-DEPOSITION PRECURSOR [J].
HOKE, JB ;
STERN, EW ;
MURRAY, HH .
JOURNAL OF MATERIALS CHEMISTRY, 1991, 1 (04) :551-554