High magnetic field effect in organic light emitting diodes

被引：5

作者：

Goto, Yuichiro ^{[2
]}

Noguchi, Takuya ^{[2
]}

Takeuchi, Utahito ^{[2
]}

Hatabayashi, Kunitada ^{[2
]}

Hirose, Yasushi ^{[2
]}

Uchida, Takayuki ^{[3
]}

Sasaki, Takehiko ^{[4
]}

Hasegawa, Tetsuya ^{[2
]}

Shimada, Toshihiro ^{[1
]}

机构：

[1] Hokkaido Univ, Fac Engn, Dept Chem Mat, Sapporo, Hokkaido 0608628, Japan

[2] Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

[3] Tokyo Polytech Univ, Dept Media & Image Technol, Atsugi, Kanagawa 2430297, Japan

[4] Univ Tokyo, Dept Complex Sci & Engn, Kashiwa, Chiba 2778561, Japan

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 07期

关键词：

Organic light emitting diode; Magnetoconductance; Magnetic field; Minority carrier; Efficiency;

D O I：

10.1016/j.orgel.2010.04.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fluorescent and phosphorescent organic light emitting diodes (OLEDs) were measured in high magnetic field up to 9 T. The current efficiency steeply increased below 100 mT as reported but gradually decreased when the field was larger. In the range of 0.1-6.5 T, the decrease was proportional to the square of the magnetic field, whereas in the range between 6.5 and 9 T, it was proportional to the square root of the magnetic field. In contrast, phosphorescent OLED did not show magnetic field dependence. Unipolar devices of n-type Alq(3) (tris-(8-hydroxyquinolino) aluminum) and p-type alpha-NPD (N',N'-di(naphthalene-1-yl)-N,N'-dipheyl-benzidine) showed positive linear magnetoresistance only for minority carriers. The mechanism of the quadratic dependence of the electroluminescent intensity is discussed based on the experimental results. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：1212 / 1216

页数：5

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