Influence of the process vacuum on the device performance of organic light-emitting diodes

被引：25

作者：

Bohler, A ^{[1
]}

Dirr, S ^{[1
]}

Johannes, HH ^{[1
]}

Ammermann, D ^{[1
]}

Kowalsky, W ^{[1
]}

机构：

[1] Tech Univ Braunschweig, Inst Hochfrequenztech, D-38092 Braunschweig, Germany

来源：

SYNTHETIC METALS | 1997年 / 91卷 / 1-3期

关键词：

diodes; light-emitting diodes; device performance;

D O I：

10.1016/S0379-6779(97)03985-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate that by growing organic light-emitting diodes (OLEDs) under ultra high vacuum (UHV) conditions at a base pressure of 10(-9) mbar with the organic molecular beam deposition (OMBD) technique, the device performance can be significantly improved. Our devices consist of a CuPc (copper phthalocyanine) hole injection layer, a 4,4'-bis( 3-methylphenylphenylamino)-biphenyl (TAD) hole transport layer and an aluminum-tris-(8-hydroxychinoline) (Alq(3)) emitter layer. The operating voltage is reduced from 7.6 to 5.4 V compared to a device realized under high vacuum (HV) conditions at 10(-6) mbar. Beside this we also found a decrease of quantum efficiency and an increased formation of black spots in our OLEDs at higher base pressures of the fabrication process. (C) 1997 Elsevier Science S.A.

引用

页码：95 / 97

页数：3

共 5 条

[1] ELECTROLUMINESCENCE IN ORGANIC FILMS WITH 3-LAYER STRUCTURE [J].

ADACHI, C ;

TOKITO, S ;

TSUTSUI, T ;

SAITO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02) :L269-L271

[2]

BOHLER A, 1996, P SID SAN DIEG CA US, P188

[3] Formation and growth of black spots in organic light-emitting diodes [J].

McElvain, J ;

Antoniadis, H ;

Hueschen, MR ;

Miller, JN ;

Roitman, DM ;

Sheats, JR ;

Moon, RL .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (10) :6002-6007

[4] DEPOSITION AND CHARACTERIZATION OF CRYSTALLINE ORGANIC SEMICONDUCTORS FOR PHOTONIC DEVICES [J].

ROMPF, C ;

AMMERMANN, D ;

KOWALSKY, W .

MATERIALS SCIENCE AND TECHNOLOGY, 1995, 11 (08) :845-848

[5] ORGANIC ELECTROLUMINESCENT DIODES [J].

TANG, CW ;

VANSLYKE, SA .

APPLIED PHYSICS LETTERS, 1987, 51 (12) :913-915

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