Total ionizing dose effects in NOR and NAND flash memories

被引：31

作者：

Cellere, Giorgio ^{[1
]}

Paccagnella, Alessandro

Visconti, Angelo

Bonanomi, Mauro

Beltrami, S.

Schwank, Jim R.

Shaneyfelt, Marty R.

Paillet, Philippe

机构：

[1] Univ Padua, DEI, I-35100 Padua, Italy

[2] STMicroelect, FRM Adv R&D, I-20041 Agrate Brianza, MI, Italy

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

[4] CEA DIF, F-91680 Bruyeres Le Chatel, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 04期

关键词：

floating gate memories; proton irradiation; total; ionizing dose;

D O I：

10.1109/TNS.2007.901199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We irradiated floating gate (FG) memories with NOR and NAND architecture by using different TID sources, including 2 MeV, 98 MeV, and 105 MeV protons, X-rays, and gamma-rays. Two classes of phenomena are responsible for charge loss from pro-grammed FGs: the first is charge generation, recombination, and transport in the dielectrics, while the second is the emission of electrons above the oxide band. Charge loss from programmed FGs irradiated with protons of different energy closely tracks results from gamma-rays, whereas the use of X-rays results in dose enhancement effects.

引用

页码：1066 / 1070

页数：5

共 29 条

[1]

[Anonymous], FLASH MEMORIES

[2]

[Anonymous], 2004, SER HIST TRENDS CHAL

[3]

AYMAR R, 2000, 18 IAEA FUS EN C SOR

[4]

BARTH J, 1997, IEEE NSREC SHORT COU

[5]

BLACKMORE E, P 2000 IEEE RAD EFF, P1

[6] Filter optimization for X-ray inspection of surface-mounted ICs [J].

Blish, RC ;

Li, SX ;

Lehtonen, D .

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, :377-379

[7] A model for TID effects on floating gate memory cells [J].

Cellere, G ;

Paccagnella, A ;

Visconti, A ;

Bonanomi, M ;

Caprara, P ;

Lora, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3753-3758

[8] A review of ionizing radiation effects in floating gate memories [J].

Cellere, G ;

Paccagnella, A .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (03) :359-370

[9] Charge loss after 60Co irradiation of flash arrays [J].

Cellere, G ;

Paccagnella, A ;

Lora, S ;

Pozza, A ;

Tao, G ;

Scarpa, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (05) :2912-2916

[10] Ionizing radiation effects on floating gates [J].

Cellere, G ;

Paccagnella, A ;

Visconti, A ;

Bonanomi, M .

APPLIED PHYSICS LETTERS, 2004, 85 (03) :485-487

← 1 2 3 →