Top- and side-gated epitaxial graphene field effect transistors

被引：33

作者：

Li, Xuebin ^{[1
]}

Wu, Xiaosong ^{[1
]}

Sprinkle, Mike ^{[1
]}

Ming, Fan ^{[1
]}

Ruan, Ming ^{[1
]}

Hu, Yike ^{[1
]}

Berger, Claire ^{[1
,2
]}

de Heer, Walt A. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] CNRS Inst Neel, F-38042 Grenoble 9, France

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 02期

关键词：

GRAPHITE; GAS;

D O I：

10.1002/pssa.200982453

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000cm(2)/Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side-gate FET structures are promising. [GRAPHICS] Conductivity (left panel) and transport resistances rho(xx) and rho(yy) of a top gate graphene Hall bar on SiC Si-face, showing a sign reversal of the Hall coefficient at the resistance peak. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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收藏

页码：286 / 290

页数：5

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