The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors

被引：88

作者：

Jeong, Jin Wook ^{[3
]}

Lee, Yang Doo

Kim, Young Min

Park, Young Wook

Choi, Jin Hwan

Park, Tae Hyun

Soo, Choi Dong ^{[2
]}

Won, Song Myung ^{[2
]}

Han, Il Ki ^{[3
]}

Ju, Byeong Kwon ^{[1
]}

机构：

[1] Korea Univ, Coll Engn, Sch Elect Engn, Display & Nanosyst Lab, Seoul 136713, South Korea

[2] Kimberly Clark Innovat Ctr Asia, Gyeonggi Do, South Korea

[3] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2010年 / 146卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Gas sensor; NH3; sensor; Poly-3-hexylthiophene; Organic semiconductor; Organic thin-film transistor; FIELD-EFFECT TRANSISTORS; POLY(3-HEXYLTHIOPHENE); MOBILITY; POLYMERS;

D O I：

10.1016/j.snb.2010.02.019

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

This paper studies the response characteristics of a gas sensor for organic thin-film transistors (OTFTs), made from spin-coated poly-3-hexylthiophene (P3HT) on a thermally grown SiO2/Si wafer. The gas response characteristics of OTFT sensors are observed from the change in the drain-source current, as a function of time. when the P3HT-based OTFT sensors of different channel widths are exposed to cycles of exposure to and the evacuation of NH3 gas, with concentration ranging from 10 to 100 ppm at room temperature in normal atmosphere. The measured drain-source current decreases rapidly with time after exposure to NH3 gas and the response characteristics of the drain-source current are seen to be higher for larger values of NH3 gas concentration. Also, the response characteristics of the OTFT sensor show that there is a shift in the threshold-voltage as well as a change in mobility after exposure to NH3 gas. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：40 / 45

页数：6

共 31 条

[1] Hybridization of a low-temperature processable polyimide gate insulator for high performance pentacene thin-film transistors [J].

Ahn, Taek ;

Kim, Jin Woo ;

Choi, Yoojeong ;

Yi, Mi Hye .

ORGANIC ELECTRONICS, 2008, 9 (05) :711-720

[2] CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING [J].

AOYAMA, T ;

KAWACHI, G ;

KONISHI, N ;

SUZUKI, T ;

OKAJIMA, Y ;

MIYATA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1169-1173

[3] DETERMINATION OF FIELD-EFFECT MOBILITY OF POLY(3-HEXYLTHIOPHENE) UPON EXPOSURE TO NH3 GAS [J].

ASSADI, A ;

GUSTAFSSON, G ;

WILLANDER, M ;

SVENSSON, C ;

INGANAS, O .

SYNTHETIC METALS, 1990, 37 (1-3) :123-130

[4] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].

Bao, Z ;

Dodabalapur, A ;

Lovinger, AJ .

APPLIED PHYSICS LETTERS, 1996, 69 (26) :4108-4110

[5] Enhanced mobility of poly(3-hexylthiophene) transistors by spin-coating from high-boiling-point solvents [J].

Chang, JF ;

Sun, BQ ;

Breiby, DW ;

Nielsen, MM ;

Sölling, TI ;

Giles, M ;

McCulloch, I ;

Sirringhaus, H .

CHEMISTRY OF MATERIALS, 2004, 16 (23) :4772-4776

[6] Printable polythiophene gas sensor array for low-cost electronic noses [J].

Chang, Josephine B. ;

Liu, Vincent ;

Subramanian, Vivek ;

Sivula, Kevin ;

Luscombe, Christine ;

Murphy, Amanda ;

Liu, Jinsong ;

Frechet, Jean M. J. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (01)

[7] Polymers for flexible displays: From material selection to device applications [J].

Choi, Myeon-Cheon ;

Kim, Youngkyoo ;

Ha, Chang-Sik .

PROGRESS IN POLYMER SCIENCE, 2008, 33 (06) :581-630

[8]

de la Torre Augusto., 2003, ECONOMIA, V3, P43

[9]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[10]

2-9

← 1 2 3 4 →