Hybridization of a low-temperature processable polyimide gate insulator for high performance pentacene thin-film transistors

被引：37

作者：

Ahn, Taek ^{[1
]}

Kim, Jin Woo ^{[1
]}

Choi, Yoojeong ^{[1
]}

Yi, Mi Hye ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Informat & Elect Polymer Res Ctr, Taejon 305600, South Korea

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 05期

关键词：

organic gate insulator; polyimide; pentacene thin-film transistor; hybridization;

D O I：

10.1016/j.orgel.2008.05.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have synthesized a novel fully soluble and low-temperature processable polyimide gate insulator (KSPI) through the one-step condensation polymerization of the monomers 5-(2,5-dioxytetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride and 4,4-diaminodiphenylmethane. Fully imidized KSPI was found to be completely soluble in organic solvents such as N-methyl-2-pyrrolidone (NMP), dimethylacetamide (DMAc), gamma-butyrolactone, dimethylsulfoxide (DMSO), and 2-butoxyethanol. Thin films of KSPI can be fabricated at only 150 degrees C and a pentacene OTFT with KSPI as a gate dielectric was found to exhibit a field effect mobility of 0.22 cm(2)/V s. To obtain a high performance organic thin-film transistor (OTFT), the KSPI surface was modified in our new technique by hybridization with a non-polar side chain containing a polyimide insulator (PI). The carrier mobility of a pentacene OTFT with a hybridized polyimide gate insulator (BPI-3) was found to be 0.92 cm(2)/V S. Our new low-temperature processable polyimides show promise as gate dielectrics for OTFTs. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：711 / 720

页数：10

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