Self organized defect free InAs/GaAs and InAs/InGaAs/GaAs quantum dots with high lateral density grown by MOCVD

被引：40

作者：

Heinrichsdorff, F

Krost, A

Bimberg, D

Kosogov, AO

Werner, P

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

MOCVD; InAs/GaAs quantum dots; photoluminescence; Stranski-Krastanow;

D O I：

10.1016/S0169-4332(97)00476-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the growth of InAs/GaAs and InAs/InGaAs/GaAs quantum dots (QDs) by metalorganic chemical vapor deposition (MOCVD). High density, defect-free InAs/GaAs quantum dots can only be grown in a narrow growth parameter window. The optimum thickness range of similar to 1.65 monolayers (MLs) has to obeyed within +/-10% in order to obtain defect-free high density (10(11) cm(-2)) QDs. During the growth interruption after the InAs deposition, the AsH3 flux also has to be switched off in order to avoid the formation of incoherent clusters. Under optimized conditions, high quality QD stacks with various separation layer thickness have been obtained. A reduction of the inhomogeneous broadening and an increase in efficiency of the room temperature luminescence is observed when the QDs are covered with a thin ternary In0.3Ga0.7As layer before the deposition of the GaAs cap layer. (C) 1998 Elsevier Science B.V.

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页码：725 / 728

页数：4

相关论文

共 11 条

[1] Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition [J].

Heinrichsdorff, F ;

Krost, A ;

Grundmann, M ;

Bimberg, D ;

Kosogov, A ;

Werner, P .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3284-3286

[2] Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition [J].

Heinrichsdorff, F ;

Mao, MH ;

Kirstaedter, N ;

Krost, A ;

Bimberg, D ;

Kosogov, AO ;

Werner, P .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :22-24

[3]

HEINRICHSDORFF F, 1997, IN PRESS JPN J APPL, V36

[4] Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers [J].

Kamath, K ;

Bhattacharya, P ;

Sosnowski, T ;

Norris, T ;

Phillips, J .

ELECTRONICS LETTERS, 1996, 32 (15) :1374-1375

[5] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].

KIRSTAEDTER, N ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

RUVIMOV, SS ;

MAXIMOV, MV ;

KOPEV, PS ;

ALFEROV, ZI ;

RICHTER, U ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J .

ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417

[6] Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing [J].

Kosogov, AO ;

Werner, P ;

Gosele, U ;

Ledentsov, NN ;

Bimberg, D ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Bert, NA ;

Alferov, ZI .

APPLIED PHYSICS LETTERS, 1996, 69 (20) :3072-3074

[7] Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth [J].

Ledentsov, NN ;

Shchukin, VA ;

Grundmann, M ;

Kirstaedter, N ;

Bohrer, J ;

Schmidt, O ;

Bimberg, D ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Zaitsev, SV ;

Gordeev, NY ;

Alferov, ZI ;

Borovkov, AI ;

Kosogov, AO ;

Ruvimov, SS ;

Werner, P ;

Gosele, U ;

Heydenreich, J .

PHYSICAL REVIEW B, 1996, 54 (12) :8743-8750

[8] Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots [J].

Leon, R ;

Kim, Y ;

Jagadish, C ;

Gal, M ;

Zou, J ;

Cockayne, DJH .

APPLIED PHYSICS LETTERS, 1996, 69 (13) :1888-1890

[9] Room temperature lasing from InGaAs quantum dots [J].

Mirin, R ;

Gossard, A ;

Bowers, J .

ELECTRONICS LETTERS, 1996, 32 (18) :1732-1734

[10] Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer [J].

Shoji, H ;

Nakata, Y ;

Mukai, K ;

Sugiyama, Y ;

Sugawara, M ;

Yokoyama, N ;

Ishikawa, H .

ELECTRONICS LETTERS, 1996, 32 (21) :2023-2024