Carrier transport mechanism in a nanoparticle-incorporated organic bistable memory device

被引：111

作者：

Lin, Heng-Tien ^{[1
]}

Pei, Zingway

Chan, Yi-Jen

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan

[2] Natl Cent Univ, Dept Elect Engn, Chungli 32001, Taiwan

[3] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 07期

关键词：

mechanism; organic memory; space-chargelimited current (SCLC);

D O I：

10.1109/LED.2007.899668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the conduction mechanism in nanoparticle-contained polymer memory was investigated experimentally and theoretically. The current-voltage characteristics showed that the device switches from an initial low-conductivity state to a high-conductivity state upon application of an external electric field at room temperature. The current transition exhibited a very narrow voltage range that causes an abrupt increase of current. A trap-filled space-charge-limited current model was proposed and supported by the experimental data to explain the transport mechanism in organic memory.

引用

页码：569 / 571

页数：3

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