GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy

被引：4

作者：

Guha, S ^{[1
]}

Bojarczuk, NA ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 23期

关键词：

gallium nitride; light emitting diodes; optoelectronic devices;

D O I：

10.1049/el:19971312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The author; have demonstrated the operation of GaN based light emitting diodes groan on Si(lll) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 in the current injection range of 20-65A/cm(2) at 5-7.5 volts.

引用

页码：1986 / 1987

页数：2

共 6 条

[1] Gotz W, 1996, APPL PHYS LETT, V68, P3470, DOI 10.1063/1.116075
[2] Hybrid organic-inorganic semiconductor-based light-emitting diodes
Guha, S
Haight, RA
Bojarczuk, NA
Kisker, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) : 4126 - 4128
[3] Surface lifetimes of Ga and growth behavior on GaN(0001) surfaces during molecular beam epitaxy
Guha, S
Bojarczuk, NA
Kisker, DW
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (19) : 2879 - 2881
[4] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES
NAKAMURA, S
SENOH, M
IWASA, N
NAGAHAMA, S
YAMADA, T
MUKAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B): : L1332 - L1335
[5] SCHETZINA J, COMMUNICATION
[6] Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy
Vaudo, RP
Goepfert, D
Moustakas, TD
Beyea, DM
Frey, TJ
Meehan, K
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) : 2779 - 2783

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