Charge-carrier separation in rolled heterostructures

被引：21

作者：

Osadchii, VM ^{[1
]}

Prinz, VY ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 2000年 / 72卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1328445

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The strains in rolled InAs/GaAs heterostructures of nanometer sizes are calculated. It is shown that the strain distributions in nanotubes (structures with coherently bounded rolls) and nanoscrolls are essentially different, resulting in different energy spectra of the charge carriers. Photogenerated electrons and holes in nanotubes can be spatially separated across the wall width. (C) 2000 MAIK "Nauka / Interperiodica".

引用

页码：312 / 315

页数：4

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