Interface between CVD diamond and iridium films

被引:24
作者
Sawabe, A
Fukuda, H
Suzuki, T
Ikuhara, Y
Suzuki, T
机构
[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Setagaya Ku, Tokyo 157, Japan
[2] Japan Fine Ceram Ctr, Res & Dev Lab, Mat Characterizat Div, Atsuta Ku, Nagoya, Aichi 456, Japan
[3] Univ Tokyo, Dept Mat Sci, Bunkyo Ku, Tokyo 113, Japan
[4] Keio Univ, Dept Mech Engn, Kohoku Ku, Yokohama, Kanagawa 223, Japan
关键词
chemical vapor deposition; diamond; electron microscopy; epitaxy; iridium; surface structure; morphology; roughness; and topography;
D O I
10.1016/S0039-6028(00)00793-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interface between [100]-oriented diamond and Ir{100} substrates was observed through electron diffraction patterns and high resolution electron microscopy at atomic scale. The following crystallographic orientation relationships were obtained by analyzing from the [110] direction: {001}(diamond)//{001}(Ir) [100](diamond)//[100](Ir). The misfit dislocations were also observed at the interface, suggesting that diamond and Ir had strong chemical bonding. The growth mechanism of diamond on Ir substrates was discussed, focused on the initial stage of nucleation. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:L845 / L849
页数:5
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