Kinetics-limited surface structures at the nanoscale

被引:13
作者
Huang, HC [1 ]
Woo, CH
Wei, HL
Zhang, XX
机构
[1] Rensselaer Polytech Inst, Dept Mech Aerosp & Nucl Engn, Troy, NY 12180 USA
[2] Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[4] Hong Kong Univ Sci & Technol, Inst Nano Sci & Technol, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.1555278
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter presents the evolution of kinetics-limited nanoscale structures during copper thin film deposition. We first calculate the three-dimensional Ehrlich-Schwoebel (3D ES) kinetic barrier of copper using the molecular dynamics/statics method. Based on this calculation, the dimension of {111} facets, under typical sputtering deposition conditions, is estimated to be 700 nm if the 3D ES barrier is effective, in contrast to 70 mum without it. Accompanying the calculations, we deposit copper <111> columns using the magnetron sputtering technique, and characterize their structures using scanning electron microscopy and x-ray diffraction techniques. The observed facets of pure copper films are on the order of 200 nm in dimension, confirming that surface structure is controlled by the 3D ES kinetic barrier. When indium is introduced as surfactant, the facet dimension increases, leading to conformal films; this is attributed to reduction of the 3D ES barrier. (C) 2003 American Institute of Physics.
引用
收藏
页码:1272 / 1274
页数:3
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