Coupled electron-phonon modes in optically pumped resonant intersubband lasers

被引:88
作者
Liu, HC [1 ]
Song, CY
Wasilewski, ZR
SpringThorpe, AJ
Cao, JC
Dharma-wardana, C
Aers, GC
Lockwood, DJ
Gupta, JA
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
关键词
D O I
10.1103/PhysRevLett.90.077402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Intersubband lasing at 12-16 mum based on a CO2 laser pumped stimulated resonant Raman process in GaAs/AlGaAs three-level double-quantum-well structures is reported. The presence, or lack of, lasing action provides evidence for resonantly coupled modes of collective electronic intersubband transitions and longitudinal optical phonons. An anticrossing behavior of these modes is clearly seen when the difference between the pump and lasing energies (i.e., Stokes Raman shift) is compared with the subband separation. This work reveals the significance of the strong coupling between intersubband transitions and phonons and raises a new possibility of realizing a phonon "laser."
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页数:4
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