High-power GaAs/AlGaAs quantum fountain unipolar laser emitting at 14.5 μm with 2.5% tunability

被引：55

作者：

Gauthier-Lafaye, O ^{[1
]}

Julien, FH

Cabaret, S

Lourtioz, JM

Strasser, G

Gornik, E

Helm, M

Bois, P

机构：

[1] Univ Paris Sud, Inst Elect Fondamentale, CNRS, URA 22, F-91405 Orsay, France

[2] Vienna Tech Univ, Inst Festokoerperelekt, A-1040 Vienna, Austria

[3] Johannes Kepler Univ, Inst Halbleitertech, A-4040 Linz, Austria

[4] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 11期

关键词：

D O I：

10.1063/1.123608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate operation of a high-power quantum fountain unipolar laser relying on intersubband emission in optically pumped GaAs/AlGaAs quantum wells. The collected power per facet is as large as 2.3 W at 20 K and 1.5 W at 120 K, which translates into 6.6 W optical power per facet at low temperature accounting for collection efficiency. The maximum operating temperature is 135 K. We also demonstrate that the lasing wavelength can be tuned by as much as Delta lambda/lambda approximate to 2.5% simply by tuning the pump wavelength. (C) 1999 American Institute of Physics. [S0003-6951(99)03511-1].

引用

页码：1537 / 1539

页数：3

共 11 条

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Casey Jr H. C., 1978, HETEROSTRUCTURE LASE

[2] ELECTRON-CAPTURE TIME MEASUREMENTS IN GAAS/ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS - PHOTORESPONSE SATURATION BY A FREE-ELECTRON LASER [J].