Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix

被引：16

作者：

Díaz-Guerra, C ^{[1
]}

Piqueras, J

Golubev, VG

Kurdyukov, DA

Pevtsov, AB

Zamoryanskaya, MV

机构：

[1] Univ Complutense, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 20期

关键词：

D O I：

10.1063/1.1325387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) are used to investigate the local electronic behavior of Pt-Si nanostructures fabricated in an opal matrix formed by silica spheres of 250 nm diameter. Si and Pt are regularly distributed inside the opal pores and form nanoscale metal-semiconductor-metal junctions. Normalized differential conductance curves enable us to study the distribution of Pt and Si and to detect the presence of regions showing a surface band gap in the range 0.5-0.8 eV, possibly associated with the formation of silicides. STS appears as a suitable technique for the electrical characterization of opal-based nanostructures. (C) 2000 American Institute of Physics. [S0003-6951(00)02146-X].

引用

页码：3194 / 3196

页数：3

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