Application of Keating's valence force field model to non-ideal wurtzite materials

被引:42
作者
Camacho, D. [1 ]
Niquet, Y. M. [1 ]
机构
[1] CEA UJF, INAC, SP2ML Sim, F-38054 Grenoble 9, France
关键词
Force field; Keating; Wurtzite; STRAIN; DIAMOND; ENERGY;
D O I
10.1016/j.physe.2009.11.035
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We discuss the application of Keating's valence force field model to non-ideal wurtzite materials such as GaN, InN and AlN. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1361 / 1364
页数:4
相关论文
共 29 条
[1]  
[Anonymous], 2009, Theory of Elasticity
[2]  
Bastard G., 1988, Wave Mechanics Applied to Semiconductor Heterostructures
[3]  
BIR CL, 1974, SYMMETRY STRAIN INDU
[4]   The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures [J].
Bougerol, C. ;
Songmuang, R. ;
Camacho, D. ;
Niquet, Y. M. ;
Mata, R. ;
Cros, A. ;
Daudin, B. .
NANOTECHNOLOGY, 2009, 20 (29)
[5]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[6]   CORRECTION [J].
CHELIKOWSKY, JR .
PHYSICAL REVIEW B, 1984, 30 (08) :4828-4828
[7]   k center dot p method for strained wurtzite semiconductors [J].
Chuang, SL ;
Chang, CS .
PHYSICAL REVIEW B, 1996, 54 (04) :2491-2504
[8]   Elastic properties of gallium and aluminum nitrides [J].
Davydov, SY ;
Solomonov, AV .
TECHNICAL PHYSICS LETTERS, 1999, 25 (08) :601-602
[9]  
Delerue C., 2004, NANOSTRUCTURES THEOR
[10]  
HARRISSON WA, 1999, ELEMENTARY ELECT STR