Study for fabricating large area diamond single-crystal layers

被引：18

作者：

Findeling-Dufour, C ^{[1
]}

Gicquel, A ^{[1
]}

机构：

[1] Univ Paris 13, Lab Ingn Mat & Hautes Press, CNRS, F-93430 Villetaneuse, France

来源：

THIN SOLID FILMS | 1997年 / 308卷

关键词：

diamond; homoepitaxy; large surface; mosaic;

D O I：

10.1016/S0040-6090(97)00428-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study on the feasibility of a process for making large area diamond, single-crystalline films using a microwave plasma assisted chemical vapour deposition reactor is presented. After choosing the (100) orientation for the seed crystals' top faces, the operating conditions of the plasma reactor were optimised in such a way that step flow mechanism or two-dimensional nucleation mechanism can be favoured. To prevent the development of facets at the crystal edges, (100) orientation was chosen for side faces and step flow growth was favoured. Penetration twins formation has been limited, using low substrate temperature and adding a very low amount of nitrogen in the feed gas. Finally, growth on top of 0.08-0.8 cm(2) mosaics is presented, and the layer grown at the interface analysed. (C) 1997 Elsevier Science S.A.

引用

页码：178 / 185

页数：8

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