Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties:: Quantum dot intermixing

被引：63

作者：

Bhattacharyya, D ^{[1
]}

Helmy, AS ^{[1
]}

Bryce, AC ^{[1
]}

Avrutin, EA ^{[1
]}

Marsh, JH ^{[1
]}

机构：

[1] Univ Glasgow, Glasgow G12 8LT, Lanark, Scotland

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 08期

关键词：

D O I：

10.1063/1.1311828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective postgrowth control of the photoluminescence (PL) wavelength has been demonstrated for a single layer self-organized In0.5Ga0.5As/GaAs quantum dot (QD) structure. This was achieved by rapid thermal processing of dots using different dielectric caps. Selective band gap shifts of over 100 meV were obtained between samples capped with sputtered and plasma enhanced silica deposition, with the band gap shift under regions covered with plasma enhanced chemical vapor deposition SiO2 less than 70 meV. The effects of different caps on the PL linewidth were also observed. The differential band gap shift will enable the integration of passive and active devices in QD systems. (C) 2000 American Institute of Physics. [S0021- 8979(00)01721-7].

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页码：4619 / 4622

页数：4

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