All jet-printed polymer thin-film transistor active-matrix backplanes

被引：232

作者：

Arias, AC

Ready, SE

Lujan, R

Wong, WS

Paul, KE

Salleo, A

Chabinyc, ML

Apte, R

Street, RA

Wu, Y

Liu, P

Ong, B

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[2] Xerox Res Ctr Canada Ltd, Mat Design & Integrat Lab, Mississauga, ON L5K 2L1, Canada

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期

关键词：

D O I：

10.1063/1.1801673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film transistor (TFT) backplanes fabricated by using jet printing as the only patterning method are reported. Additive and subtractive printing processes are combined to make 128x128 pixel active matrix arrays with 340 mum pixel size. The semiconductor used, a regioregular polythiophene, poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene]; (PQT-12) is deposited by inkjet printing and exhibits average TFT mobility of 0.06 cm(2)/VS, on/off ratios of 10(6), and minimal bias stress. The printed TFTs have high yield with a narrow performance distribution. The pixel design benefits from the registration accuracy of jet printing and it is shown that the electrical performance is suitable for addressing capacitive media displays. (C) 2004 American Institute of Physics.

引用

页码：3304 / 3306

页数：3

共 21 条

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