InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region

被引：15

作者：

Christol, P

Bigenwald, P

Wilk, A

Joullié, A

Gilard, O

Carrère, H

Lozes-Dupuy, F

Behres, A

Stein, A

Kluth, J

Heime, K

Skouri, EM

机构：

[1] Fac Sci Avignon, Phys Mat Lab, F-84000 Avignon, France

[2] Univ Montpellier 2, Ctr Electron & Microoptoelectron Montpellier CEM2, CNRS, Unite Mixte Rech 5507, F-34095 Montpellier 05, France

[3] CNRS, LAAS, F-31077 Toulouse 04, France

[4] Rhein Westfal TH Aachen, Inst Halbleitertech, D-52056 Aachen, Germany

[5] Univ Ibnou Zohr, Agadir, Morocco

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 2000年 / 147卷 / 03期

关键词：

D O I：

10.1049/ip-opt:20000479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained InAs1-xSbx(0 < x < 0.22) quantum wells with InAs, InAsP, or InAsPSb barrier layers have been grown by metal-organic vapour-phase deposition on InAs substrates. Their photoluminescence and electroluminescence were studied at 20 K. The photoluminescence peak-wavelength evolution with the antimony composition x and the nature of the barrier were theoretically predicted in a satisfactory manner under the assumption of a type-II band alignment for the InAsSb/InAs system with a valence band ratio Q(v) = -1.30. This hypothesis leads to a type-IIa band alignment for the arsenic-rich InAsSb/InAsP system. Starting from this result, a 'W' laser structure, consisting of ten periods of InAsSb/InAsP/InAsSb/InAsPSb multiquantum wells in the active region, a broadened InAsPSb waveguide, and AlAsSb cladding layers, is proposed for room-temperature emission near 3.3 mu m.

引用

页码：181 / 187

页数：7

共 35 条

[1] OPTICAL GAIN AND GAIN SUPPRESSION OF QUANTUM-WELL LASERS WITH VALENCE BAND MIXING [J].