Improvement of Sb-based multiquantum well lasers by Coulomb enhancement

被引：14

作者：

Christol, P

Bigenwald, P

Joullié, A

Cuminal, Y

Baranov, AN

Bertru, N

Rouillard, Y

机构：

[1] Fac Sci Avignon, Phys Mat Lab, F-84000 Avignon, France

[2] Univ Montpellier 2, Ctr Electron & Microoptoelect Montpellier, CNRS, UMR 5507, F-34095 Montpellier 5, France

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 1999年 / 146卷 / 01期

关键词：

D O I：

10.1049/ip-opt:19990456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained GalnAsSb/GaSb quantum wells, grown by molecular beam epitaxy on GaSb substrates, have exhibited laser emissions at 2.35 mu m and 2.65 mu m at 23 degrees C with respective threshold current densities of 0.6kA/cm(2) and 3kA/cm(2). Taking into account the Coulomb attraction. induced by carrier injection, we explain why room temperature lasing is possible in these structures, which have a type-II band alignment. A comparison between experimental and simulated data including Coulomb enhancement shows the essential part played by the electrostatic confinement in these quantum well laser structures.

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页码：3 / 8

页数：6

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