Enhanced photoluminescence from GaAsSb quantum wells

被引：2

作者：

Kost, AR ^{[1
]}

Sun, X

Peyghambarian, N

Eradat, N

Selvig, E

Fimland, BO

Chow, DH

机构：

[1] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

[2] Middle Tennessee State Univ, Dept Phys & Astron, Murfreesboro, TN 37132 USA

[3] Norwegian Def Res Estab, NO-2027 Kjeller, Norway

[4] Norwegian Univ Sci & Technol, Dept Phys Elect, NO-7491 Trondheim, Norway

[5] HRL Labs LLC, Malibu, CA 90265 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 23期

关键词：

D O I：

10.1063/1.1759381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe promising semiconductor materials for optoelectronics. GaAsSb/AlSb quantum wells on GaSb substrates show photoluminescence near 1.54 mum (0.8 eV) that increases with increasing arsenic fraction. The materials can be monolithically integrated with AlGaSb/AlSb or AlGaAsSb/AlAsSb Bragg mirrors. (C) 2004 American Institute of Physics.

引用

收藏

页码：5631 / 5633

页数：3

相关论文

共 17 条

[1] REFRACTIVE-INDEXES OF III-V COMPOUNDS - KEY PROPERTIES OF INGAASP RELEVANT TO DEVICE DESIGN [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5863-5869

[2] REFRACTIVE-INDEXES OF ALSB AND GASB-LATTICE-MATCHED ALXGA1-XASYSB1-Y IN THE TRANSPARENT WAVELENGTH REGION [J].

ALIBERT, C ;

SKOURI, M ;

JOULLIE, A ;

BENOUNA, M ;

SADIQ, S .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3208-3211

[3] GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 μm operation [J].

Almuneau, G ;

Genty, F ;

Wilk, A ;

Grech, P ;

Joullié, A ;

Chusseau, L .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (01) :89-92

[4] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS [J].

BABIC, DI ;

STREUBLE, K ;

MIRIN, RP ;

MARGALIT, NM ;

BOWERS, JE ;

HU, EL ;

MARS, DE ;

YANG, L ;

CAREY, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1225-1227

[5]

Chang-Hasnain CJ, 2003, IEEE COMMUN MAG, pS30

[6] GASB/ALSB MULTIQUANTUM WELL STRUCTURES - MOLECULAR-BEAM EPITAXIAL-GROWTH AND NARROW-WELL PHOTO-LUMINESCENCE [J].

GRIFFITHS, G ;

MOHAMMED, K ;

SUBBANA, S ;

KROEMER, H ;

MERZ, JL .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1059-1061

[7] Suppression of intervalley scattering in Ga(As)Sb quantum wells [J].

Hall, KC ;

Leonard, SW ;

van Driel, HM ;

Kost, AR ;

Selvig, E .

APPLIED PHYSICS LETTERS, 2000, 77 (18) :2882-2884

[8] Long-wavelength vertical-cavity lasers and amplifiers [J].

Karim, A ;

Björlin, S ;

Piprek, J ;

Bowers, JE .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (06) :1244-1253

[9]

KELLER U, 1999, NONLINEAR OPTICS SEM, V2, pCH4

[10] GaInNAs: A novel material for long-wavelength semiconductor lasers [J].

Kondow, M ;

Kitatani, T ;

Nakatsuka, S ;

Larson, MC ;

Nakahara, K ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :719-730