Suppression of intervalley scattering in Ga(As)Sb quantum wells

被引：4

作者：

Hall, KC

Leonard, SW

van Driel, HM

Kost, AR

Selvig, E

机构：

[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

[2] HRL Labs LLC, Malibu, CA 90265 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 18期

关键词：

D O I：

10.1063/1.1322368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Femtosecond time-resolved reflectivity was measured near the 1.55 mum absorption edge of several GaAsxSb1-x/AlSb quantum well samples. On the basis of differences in the reflectivity recovery kinetics and plateau values, we deduce that Gamma -L intervalley scattering can be effectively suppressed for x greater than or equal to0.19. This is consistent with calculations incorporating confinement and strain effects which give L-Gamma energy separations of 29 (x=0) and 109 meV (x=0.19). Suppression of intervalley scattering can lead to increased internal quantum efficiency and higher carrier mobility in 1.55 mum based devices. (C) 2000 American Institute of Physics. [S0003-6951(00)04244-3].

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页码：2882 / 2884

页数：3

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