GaSb vertical-cavity surface-emitting lasers for type 1.5 μm range

被引:32
作者
Koeth, J [1 ]
Dietrich, R [1 ]
Forchel, A [1 ]
机构
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
关键词
D O I
10.1063/1.121138
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have developed GaSb/AlGaSb vertical-cavity surface-emitting lasers (VCSELs) by using solid source molecular beam epitaxy. The reflectivity spectra of the VCSELs show a very narrow (0.9 meV) cavity resonance at 1.5 mu m. cw: optical pumping results in lasing at the wavelength of. the cavity resonance with a laser threshold density of 530 W/cm(2) at 77 K. (C) 1998 American Institute of Physics.
引用
收藏
页码:1638 / 1640
页数:3
相关论文
共 12 条
[1]   REFRACTIVE-INDEXES OF ALSB AND GASB-LATTICE-MATCHED ALXGA1-XASYSB1-Y IN THE TRANSPARENT WAVELENGTH REGION [J].
ALIBERT, C ;
SKOURI, M ;
JOULLIE, A ;
BENOUNA, M ;
SADIQ, S .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3208-3211
[2]   ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS [J].
BABIC, DI ;
STREUBLE, K ;
MIRIN, RP ;
MARGALIT, NM ;
BOWERS, JE ;
HU, EL ;
MARS, DE ;
YANG, L ;
CAREY, K .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1225-1227
[3]   HIGH REFLECTIVITY 1.55-MU-M INP/INGAASP BRAGG MIRROR GROWN BY CHEMICAL BEAM EPITAXY [J].
CHOA, FS ;
TAI, K ;
TSANG, WT ;
CHU, SNG .
APPLIED PHYSICS LETTERS, 1991, 59 (22) :2820-2822
[4]   THE TEMPERATURE AND PRESSURE-DEPENDENCE OF REFRACTIVE-INDEXES OF SOME III-V AND II-VI BINARY SEMICONDUCTORS [J].
GHOSH, DK ;
SAMANTA, LK ;
BHAR, GC .
INFRARED PHYSICS, 1986, 26 (02) :111-114
[5]   CONTROLLED SPONTANEOUS EMISSION IN ROOM-TEMPERATURE SEMICONDUCTOR MICROCAVITIES [J].
HUFFAKER, DL ;
LEI, C ;
DEPPE, DG ;
PINZONE, CJ ;
NEFF, JG ;
DUPUIS, RD .
APPLIED PHYSICS LETTERS, 1992, 60 (26) :3203-3205
[6]   VERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION [J].
JEWELL, JL ;
HARBISON, JP ;
SCHERER, A ;
LEE, YH ;
FLOREZ, LT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1332-1346
[7]   HIGH REFLECTIVITY 1.55 MU-M (AL)GASB/ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY [J].
LAMBERT, B ;
TOUDIC, Y ;
ROUILLARD, Y ;
BAUDET, M ;
GUENAIS, B ;
DEVEAUD, B ;
VALIENTE, I ;
SIMON, JC .
APPLIED PHYSICS LETTERS, 1994, 64 (06) :690-691
[8]   EFFECT OF AN ALAS/GAAS MIRROR ON THE SPONTANEOUS EMISSION OF AN INGAAS-GAAS QUANTUM-WELL [J].
ROGERS, TJ ;
DEPPE, DG ;
STREETMAN, BG .
APPLIED PHYSICS LETTERS, 1990, 57 (18) :1858-1860
[9]   Laser emission from photonic dots [J].
Rohner, M ;
Reithmaier, JP ;
Forchel, A ;
Schafer, F ;
Zull, H .
APPLIED PHYSICS LETTERS, 1997, 71 (04) :488-490
[10]   Evolution of GaSb epitaxy on GaAs(001)-c(4x4) [J].
Thibado, PM ;
Bennett, BR ;
Twigg, ME ;
Shanabrook, BV ;
Whitman, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :885-889