OPTICAL-PROPERTIES OF GASB/GA0.69AL0.31SB SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引:7
作者
DASILVA, FWO
RAISIN, C
GAILLARD, S
ALIBERT, C
ROCHER, A
机构
[1] UNIV MONTPELLIER 2,EQUIPE MICROOPTOELECTR MONTPELLIER,CNRS,UA 392,F-34060 MONTPELLIER,FRANCE
[2] CTR ELABORAT MAT & ETUD STRUDIVALS,CNRS,OPT ELECTR LAB,F-31400 TOULOUSE,FRANCE
关键词
D O I
10.1016/0040-6090(90)90127-Y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molecular beam epitaxial GaSb/Ga0.69Al0.31Sb quantum well structures were characterized by electrorelfectance and transmission electron microscopy. The optical properties analysed are in good agreement with the predictions of a simple model of confined layer states. © 1990.
引用
收藏
页码:21 / 27
页数:7
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