Ultrathin film encapsulation of an OLED by ALD

被引：130

作者：

Park, SHK ^{[1
]}

Oh, J ^{[1
]}

Hwang, CS ^{[1
]}

Lee, JI ^{[1
]}

Yang, YS ^{[1
]}

Chu, HY ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 02期

关键词：

D O I：

10.1149/1.1850396

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Fabrication of barrier layers on a PES film and an organic light emitting diode (OLED) based on a glass substrate by atomic layer deposition (ALD) have been carried out. Deposition of 30 nm of AlOx film on both sides of PES film at 90degreesC gave film MOCON value of 0.0615 g/m(2)/day. The passivation performance of the double layer consisting of SiNx deposited by plasma-enhanced chemical vapor deposition and AlOx by ALD on the OLED has been investigated using the OLED based on a glass substrate. Preliminary life time of two pairs of double layer coated OLED to 65% of initial luminance was 600 h at the initial luminance of 1200 cd/m(2). (C) 2005 The Electrochemical Society.

引用

页码：H21 / H23

页数：3

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