Low temperature PECVD SiNx films applied in OLED packaging

被引：89

作者：

Huang, WD ^{[1
]}

Wang, XH

Sheng, M

Xu, LQ

Stubhan, F

Luo, L

Feng, T

Wang, X

Zhang, FM

Zou, SC

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, Shanghai 200050, Peoples R China

[2] Daimler Chrysler SIM Technol Co Ltd, Shanghai 200050, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, Shanghai 200050, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 98卷 / 03期

关键词：

thin film; PECVD; OLED; packaging;

D O I：

10.1016/S0921-5107(03)00045-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Plasma Enhanced Chemical Vapor Deposition (PECVD) SiNx films deposited at the substrate temperatures from 20 to 180degreesC and at the RF powers from 10 to 30 W were investigated. It is found that the films' properties such as density, refractive index, composition and bonding configuration are varied with the substrate temperature and RF power. The moisture resistant ability of the deposited SiNx films was investigated by the water vapor permeation (WVP) measurement. Even at the low substrate temperature such as 50degreesC, the moisture resistance of SiNx films keeps quite good. Our results can be applied in Organic Light Emitting Devices (OLED) packaging effectively. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：248 / 254

页数：7

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