PREPARATION AND CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE

被引：53

作者：

BLAAUW, C

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 05期

关键词：

D O I：

10.1149/1.2115761

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1114 / 1118

页数：5

共 18 条

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[2] R F PLASMA DEPOSITION OF SILICON-NITRIDE LAYERS [J].

HELIX, MJ ;

VAIDYANATHAN, KV ;

STREETMAN, BG ;

DIETRICH, HB ;

CHATTERJEE, PK .

THIN SOLID FILMS, 1978, 55 (01) :143-148

[3]

HOLLAHAN JR, 1978, THIN FILM PROCESSES

[4]

KERN W, 1970, RCA REV, V31, P187

[5] ADVANCES IN DEPOSITION PROCESSES FOR PASSIVATION FILMS [J].

KERN, W ;

ROSLER, RS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1082-1099

[6]

KIROV KI, 1980, THIN SOLID FILMS, V72, pL9

[7] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

[8] PLASMA DEPOSITION OF INORGANIC SILICON CONTAINING FILMS [J].

REINBERG, AR .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :345-375

[9]

ROSLER RS, 1979, SOLID STATE TECHNOL, V22, P88

[10]

ROSLER RS, 1976, SOLID STATE TECHNOL, V19, P45

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