Swift heavy ion induced modifications of silicon (sub) oxide nitride layer structures

被引：17

作者：

Arnoldbik, W. M. ^{[1
]}

Habraken, F. H. P. M. ^{[1
]}

机构：

[1] Univ Utrecht, Dept Phys & Astron, Surfaces Interfaces & Devices, Debye Inst, NL-3508 TA Utrecht, Netherlands

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 256卷 / 01期

关键词：

radiation induced diffusion; silicon nitride thin films; elastic recoil detection analysis; radiation damage; permeability; silicon oxide;

D O I：

10.1016/j.nimb.2006.12.017

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Irradiation of a bilayer consisting of a deuterated silicon nitride and a silicon sub-oxide film with heavy ions in the electronic stopping regime results in incorporation of nitrogen and deuterium in the sub-oxides. This experimental observation is discussed within the model, originally established to understand the loss of hydrogen from hydrogenated organic and inorganic materials. This and other reported observations of transport within the bilayer emphasize the role of trapping and permeation in the model. (c) 2006 Elsevier B.V. All rights reserved.

引用

收藏

页码：300 / 304

页数：5

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