THERMAL NITRIDATION OF SIOXHY FILMS

被引：3

作者：

HABRAKEN, FHPM

GEERLINGS, ELJ

TIJHAAR, RHG

SLOMP, A

VANDERWEG, WF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2573 / 2575

页数：3

共 8 条

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[2] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

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[6] RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (10) :1113-1115

[7] ELECTRICAL-CONDUCTIVITY OF SEMI-INSULATING POLYCRYSTALLINE SILICON AND ITS DEPENDENCE UPON OXYGEN-CONTENT [J].

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APPLIED PHYSICS LETTERS, 1981, 39 (07) :554-556

[8] THE ROLE OF HYDROGEN IN THE DEPOSITION, COMPOSITION, AND STRUCTURE OF SEMI-INSULATING POLYCRYSTALLINE SILICON FILMS [J].

VERSTEGEN, B ;

HABRAKEN, FHPM ;

VANDERWEG, WF ;

HOLSBRINK, J ;

SNIJDER, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2766-2770

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