ELECTRICAL-CONDUCTIVITY OF SEMI-INSULATING POLYCRYSTALLINE SILICON AND ITS DEPENDENCE UPON OXYGEN-CONTENT

被引：53

作者：

NI, J

ARNOLD, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 07期

关键词：

D O I：

10.1063/1.92791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：554 / 556

页数：3

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[1] ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431
[2] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS
COHEN, MH
FRITZSCHE, H
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1065 - +
[3] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS
DIMARIA, DJ
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2722 - 2735
[4] DUKE CB, 1969, TUNNELING SOLIDS, pCH4
[5] Goodman A. M., 1979, Physics of Semiconductors 1978, P805
[6] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
ADACHI, T
WAKAYAMA, S
KIKUCHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992
[7] ELECTRONIC PROPERTIES OF SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
ADACHI, T
WAKAYAMA, S
KIKUCHI, M
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (06) : 591 - 593
[8] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
SNOW, EH
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +
[9] SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) PASSIVATION TECHNOLOGY
MATSUSHITA, T
AOKI, T
OTSU, T
YAMOTO, H
HAYASHI, H
OKAYAMA, M
KAWANA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 35 - 40
[10] MOCHIZUKI M, 1976, J JAPAN SOC APPL P S, V15, P41