220-fs erbium-ytterbium:glass laser mode locked by a broadband low-loss silicon/germanium saturable absorber

被引：23

作者：

Grawert, FJ

Gopinath, JT

Ilday, FÖ

Shen, HM

Ippen, EP

Kärtner, FX

Akiyama, S

Liu, J

Wada, K

Kimerling, LC

机构：

[1] MIT, Dept Comp Sci & Elect Engn, Cambridge, MA 02139 USA

[2] MIT, Elect Res Lab, Cambridge, MA 02139 USA

[3] MIT, Ctr Mat Proc, Cambridge, MA 02139 USA

[4] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

OPTICS LETTERS | 2005年 / 30卷 / 03期

关键词：

D O I：

10.1364/OL.30.000329

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate femtosecond performance of an ultrabroadband high-index-contrast saturable Bragg reflector consisting of a silicon/silicon dioxide/germanium structure that is fully compatible with CMOS processing. This device offers a reflectivity bandwidth of over 700 nm and subpicosecond recovery time of the saturable loss. It is used to achieve mode locking of an Er-Yb:glass laser centered at, 1540 nm. generating 220-fs pulses, with what is to our knowledge the broadest output spectrum to date. (C) 2005 Optical Society of America.

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页码：329 / 331

页数：3

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