Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1-x strained layers

被引：10

作者：

Huang, CJ ^{[1
]}

Li, DZ ^{[1
]}

Yu, Z ^{[1
]}

Cheng, BW ^{[1
]}

Yu, JZ ^{[1
]}

Wang, QM ^{[1
]}

机构：

[1] Acad Sinica, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 03期

关键词：

D O I：

10.1063/1.126986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A constant amount of Ge was deposited on strained GexSi1-x layers of approximately the same thickness but with different alloy compositions, ranging from x = 0.06 to x = 0.19. From their atomic-force-microscopy images, we found that both the size and density of Ge islands increased with the Ge composition of the strained layer. By conservation of mass, this implies that these islands must incorporate material from the underlying strained layer. (C) 2000 American Institute of Physics. [S0003-6951(00)03529-4].

引用

页码：391 / 393

页数：3

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