Spontaneous self-embedding of three-dimensional SiGe islands

被引：28

作者：

Mateeva, E ^{[1
]}

Sutter, P

Lagally, MG

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

[2] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.123147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that, under appropriate conditions, high-Ge-concentration coherent three-dimensional SiGe islands grown on Si(100) self-embed in a matrix of a low-Ge-concentration alloy. The process may be more generally useful for preserving the shape of self-assembled "quantum dot" islands during embedding in a matrix material. (C) 1999 American Institute of Physics. [S0003-6951(99)05104-9].

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收藏

页码：567 / 569

页数：3

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