The influence of buffer layer on the transient behavior of thin film chalcopyrite devices

被引：45

作者：

Igalson, M

Platzer-Björkman, C

机构：

[1] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland

[2] Uppsala Univ, Angstrom Solar Ctr, SE-75121 Uppsala, Sweden

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2004年 / 84卷 / 1-4期

关键词：

trap levels; interface; capacitance spectroscopy; buffer; Cu(In; Ga)Se-2;

D O I：

10.1016/j.solmat.2004.02.038

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Photovoltaic devices based on Cu(In,Ga)Se-2 with Cd-free buffer layer exhibit worse photovoltaic parameters and more pronounced transient behavior than standard CdS-buffered structures. In this work the electrical characteristics of the cells with ZnO buffer obtained by atomic layer deposition technique are compared to those of baseline CdS/CIGS cells. Persistent changes induced by light soaking and reverse-bias soaking in the current voltage characteristics, admittance and DLTS spectra are analyzed. We discuss a role of buffer layer for the enhanced net doping in the interfacial region of absorber, Fermi-level pinning and conduction band offsets at the heterointerface for the photovoltaic performance of the cell. (C) 2004 Elsevier B.V. All rights reserved.

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页码：93 / 103

页数：11

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