Large area nanoimprint fabrication of sub-100 nm interdigitaded metal arrays

Nanoimprint lithography over 2 inch wafers with a patterned area of 40 000 mu m(2) consisting of interdigitated lines of 100 nm width with varying distance between the lines has been performed. By performing metal lift-off and subsequent UV-lithography for definition of contact regions and pads, complete metal arrays have been fabricated. The structure is electrically characterized by admittance spectroscopy. In this paper we describe the design and realization of a compact nanoimprint lithography system. Furthermore, various aspects of nanoimprint lithography are discussed, and nanoimprint lithography is compared with other nanostructuring technologies.