An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography

被引：4

作者：

McNally, PJ ^{[1
]}

Curley, J

Krier, A

Mao, Y

Richardson, J

Tuomi, T

Taskinen, M

Rantamaki, R

Prieur, E

Danilewsky, A

机构：

[1] Dublin City Univ, Sch Elect Engn, Microelect Res Lab, Dublin 9, Ireland

[2] Univ Lancaster, Sch Phys & Chem, Adv Mat & Photon Grp, Lancaster LA1 4YB, England

[3] Helsinki Univ Technol, Optoelect Lab, FIN-02150 Espoo, Finland

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 04期

关键词：

D O I：

10.1088/0268-1242/13/4/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Synchrotron x-ray topography was used to evaluate dislocation generation for liquid phase heteroepitaxy of strained layer In0.97Ga0.03As on n-type InAs substrates. Severe misfit dislocation generation is observed for epilayer thicknesses of 4 mu m and many of these form threading dislocations which are observed at the surface. However, for thicker epilayer growth (up to 70 mu m in this study), this misfit dislocation generation appears to be confined to a region close to the heterointerface, with few threading dislocations approaching the surface. These data correlates well with photoluminescence and optical microscopy measurements.

引用

页码：345 / 349

页数：5

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