ROOM-TEMPERATURE INASXSBYP1-X-Y LIGHT-EMITTING-DIODES FOR CO2 DETECTION AT 4.2-MU-M

被引：18

作者：

KRIER, A ^{[1
]}

机构：

[1] LASER MONITORING SYST LTD,CTR NEWLANDS,HULL HU6 7TQ,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 24期

关键词：

D O I：

10.1063/1.102899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using a graded composition InAsSbP quaternary layer grown by liquid phase epitaxy it was possible to fabricate light-emitting diodes which emit near 4.2 μm at room temperature, corresponding to the fundamental absorption of CO2 gas.

引用

页码：2428 / 2429

页数：2

共 9 条

[1] NEAR-EQUILIBRIUM LPE GROWTH OF GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES
DAWSON, LR
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 86 - 96
[2] DOLIGNOV LM, 1978, SOV TECH PHYS LETT, V4, P580
[3] Esina N. P., 1983, Soviet Technical Physics Letters, V9, P167
[4] LIQUID-PHASE EPITAXIAL-GROWTH OF INASXSBYP1-X-Y LAYERS ON INAS
GERTNER, ER
CHEUNG, DT
ANDREWS, AM
LONGO, JT
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 163 - 172
[5] HORIKOSHI Y, 1985, SEMICONDUCT SEMIMET, V22, P93
[6] PREPARATION OF MULTILAYER LPE HETEROSTRUCTURES WITH CRYSTALLINE SOLID SOLUTIONS OF ALXGA1-XAS - HETEROSTRUCTURE LASERS
PANISH, MB
SUMSKI, S
HAYASHI, I
[J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 795 - &
[7] LASER OSCILLATION AT 3-4-MU-M FROM OPTICALLY PUMPED INAS1-X-YSBXPY
VANDERZIEL, JP
LOGAN, RA
MIKULYAK, RM
BALLMAN, AA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (11) : 1827 - 1832
[8] Zotova N. V., 1986, Soviet Technical Physics Letters, V12, P599
[9] Zotova N. V., 1987, Crystal Properties and Preparation, V12, P243

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