ROOM-TEMPERATURE INASXSBYP1-X-Y LIGHT-EMITTING-DIODES FOR CO2 DETECTION AT 4.2-MU-M

被引:18
作者
KRIER, A [1 ]
机构
[1] LASER MONITORING SYST LTD,CTR NEWLANDS,HULL HU6 7TQ,ENGLAND
关键词
D O I
10.1063/1.102899
中图分类号
O59 [应用物理学];
学科分类号
摘要
By using a graded composition InAsSbP quaternary layer grown by liquid phase epitaxy it was possible to fabricate light-emitting diodes which emit near 4.2 μm at room temperature, corresponding to the fundamental absorption of CO2 gas.
引用
收藏
页码:2428 / 2429
页数:2
相关论文
共 9 条