Preparation of heavily N-type ZnSe doped by iodine in remote plasma enhanced metal organic chemical vapor deposition

被引：4

作者：

Noda, D

Aoki, T

Nakanishi, Y

Hatanaka, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 10期

关键词：

ZnSe; MOCVD; iodine-doped ZnSe; n-butyliodide; plasma enhanced MOCVD;

D O I：

10.1143/JJAP.36.6302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Iodine-duped zinc selenide (ZnSe:I) layers were grown by remote plasma enhanced metal organic chemical vapor deposition (RPE-MOCVD) using n-butyliodide (n-BtI), The carrier concentration was controlled from 2 x 10(16) to 8.2 x 10(19) cm(-3) by the dopant flow rate, where the mobilities renged from 200 to 50 cm(2) V-1 s(-1), respectively. The low-resistivity of 7.3 x 10(-4) Omega cm was attained at the highest doping level.

引用

页码：6302 / 6303

页数：2

共 6 条

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