IODINE-DOPED LOW-RESISTIVITY N-TYPE ZNSE FILMS GROWN BY MOVPE

[1] ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 149 - +

[2] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

[3] ZINC VACANCY-ASSOCIATED DEFECTS AND DONOR-ACCEPTOR RECOMBINATION IN ZNSE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (34): : 6409 - 6419

[4] SUPERIORITY OF GROUP VII ELEMENTS OVER GROUP-III ELEMENTS AS DONOR DOPANTS IN MOCVD ZNSE [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 285 - 289

[5] GA-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY FOR BLUE-LIGHT EMITTING DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L387 - L389

[6] OHKAWA K, 1986, 18TH C SOL STAT DEV, P635

[7] HIGH-QUALITY ZNSE FILM GROWTH BY 0.1-ATM MOVPE UNDER THE DIETHYLZINC DIFFUSION-LIMITED CONDITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (08): : 1305 - 1309

[8] USE OF ETHYLIODIDE IN PREPARATION OF LOW-RESISTIVITY N-TYPE ZNSE BY METALORGANIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (02): : L251 - L253

[9] PREPARATION OF LOW-RESISTIVITY N-TYPE ZNSE BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 352 - 354

[10] HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 499 - 501

[1] ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 149 - +

[2] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

[3] ZINC VACANCY-ASSOCIATED DEFECTS AND DONOR-ACCEPTOR RECOMBINATION IN ZNSE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (34): : 6409 - 6419

[4] SUPERIORITY OF GROUP VII ELEMENTS OVER GROUP-III ELEMENTS AS DONOR DOPANTS IN MOCVD ZNSE [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 285 - 289

[5] GA-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY FOR BLUE-LIGHT EMITTING DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L387 - L389

[6] OHKAWA K, 1986, 18TH C SOL STAT DEV, P635

[7] HIGH-QUALITY ZNSE FILM GROWTH BY 0.1-ATM MOVPE UNDER THE DIETHYLZINC DIFFUSION-LIMITED CONDITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (08): : 1305 - 1309

[8] USE OF ETHYLIODIDE IN PREPARATION OF LOW-RESISTIVITY N-TYPE ZNSE BY METALORGANIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (02): : L251 - L253

[9] PREPARATION OF LOW-RESISTIVITY N-TYPE ZNSE BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 352 - 354

[10] HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 499 - 501