Influence of Device Geometry on Sensor Characteristics of Planar Organic Electrochemical Transistors

被引：171

作者：

Cicoira, Fabio ^{[1
]}

Sessolo, Michele ^{[1
]}

Yaghmazadeh, Omid ^{[1
]}

DeFranco, John A. ^{[1
]}

Yang, Sang Yoon ^{[1
]}

Malliaras, George G. ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 09期

基金：

美国国家科学基金会;

关键词：

ELECTRONICS; ARRAY;

D O I：

10.1002/adma.200902329

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The response of PEDOT:PSS planar electrochemical transistors to H2O2 can be tuned by varying the ratio between the areas of the channel and the gate electrode. Devices with small gates show lower background signal and higher sensitivity. The detection range, on the other hand, is found to be rather independent of the gate/channel area ratio.

引用

页码：1012 / +

页数：6

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