Quantum dots: lasers and amplifiers

被引：28

作者：

Bimberg, D ^{[1
]}

Ribbat, C ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期

关键词：

amplifier; laser; frequency;

D O I：

10.1016/S0026-2692(03)00018-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous wave room-temperature output power of similar to5 W for edge-emitters and of 1.2 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 mum. Lasers emitting at 1140-60 nm useful as pump sources for Tm3+-doped fibers for frequency up-conversion to 490 nm reach output powers close to 12 W and show transparency current densities of 6 A/cm(2) per dot layer, eta(int) = 98% and alpha(i) = 1.5 cm(-1). Long operation lifetimes and radiation hardness are manifested. Cut-off frequencies of about 10 GHz and low a-factors are realized. Quantum dot semiconductor optical amplifiers (QD SOAs) demonstrate gain recovery times of 120-140 fs, 4-7 times faster than bulk/QW SOAs. The breakthrough became possible due to development of self-organized growth in QD technology. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：323 / 328

页数：6

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