Partially hydrogenated poly(vinyl phenol) based photoresist for near UV, high aspect ratio micromachining

被引：9

作者：

Chatzichristidi, M ^{[1
]}

Raptis, I

Argitis, P

Everett, J

机构：

[1] NCSR Demokritos, Inst Microelect, GR-15310 Athens, Greece

[2] Dow Chem Co USA, D-77836 Rheinmunster, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 06期

关键词：

D O I：

10.1116/1.1521741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

A negative resist platform based on a low Mw epoxy novolac polymer; partially hydrogenated poly(vinyl phenol)s and suitable onium salt photoacid generators is presented and evaluated for high aspect ratio micromachining. The high content of hydroxyl groups in this resist system allows development in standard aqueous base solutions (TMAH 0.26 N). The effects of material parameters such as the degree of poly(vinyl phenol) hydrogenation and the onium salt hydrophobicity on the development process are examined. The cross-linked areas of this resist can be easily removed by commercial wet photoresist strippers after processing. Experimental data demonstrate a promising lithographic performance with an aspect ratio of 7:1 for 5 mum closely spaced lines under exposure at 365 nm. (C) 2002 American Vacuum Society.

引用

页码：2968 / 2972

页数：5

共 14 条

[1]

Advanced epoxy novolac resist for fast high-resolution electron-beam lithography [J].

Argitis, P ;

Raptis, I ;

Aidinis, CJ ;

Glezos, N ;

Baciocchi, M ;

Everett, J ;

Hatzakis, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :3030-3034

[2]

Aqueous base developable epoxy resist for high sensitivity electron beam lithography [J].

Argitis, P ;

Glezos, N ;

Vasilopoulou, M ;

Raptis, I ;

Hatzakis, M ;

Everett, J ;

Meneghini, G ;

Palumbo, A ;

Ardito, M ;

Hudek, P ;

Kostic, I .

MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) :453-456

[3]

Strippable aqueous base developable negative photoresist for high aspect ratio micromachining [J].

Chatzichristidi, M ;

Raptis, L ;

Diakoumakos, CD ;

Glezos, N ;

Argitis, P ;

Sanopoulou, M .

MICROELECTRONIC ENGINEERING, 2002, 61-2 :729-735

[4]

Low cost fabrication of micromechanical systems [J].

Cui, Z ;

Lawes, RA .

MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :389-392

[5]

Synthesis of some onium salts and their comparison as cationic photoinitiators in an epoxy resist [J].

Everett, JP ;

Schmidt, DL ;

Rose, GD ;

Argritis, P ;

Aidinis, CJ ;

Hatzakis, M .

POLYMER, 1997, 38 (07) :1719-1723

[6]

Process characterization of an ultra-thick strippable photoresist using a broadband stepper [J].

Flack, WW ;

Kulas, S ;

Minsek, DW .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 :478-489

[7]

Aqueous base development and acid diffusion length optimization in negative epoxy resist for electron beam lithography [J].

Glezos, N ;

Argitis, P ;

Velessiotis, D ;

Raptis, I ;

Hatzakis, M ;

Hudek, P ;

Kostic, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3431-3434

[8]

Micromachining applications of a high resolution ultrathick photoresist [J].

Lee, KY ;

LaBianca, N ;

Rishton, SA ;

Zolgharnain, S ;

Gelorme, JD ;

Shaw, J ;

Chang, THP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :3012-3016

[9]

Thick-layer resists for surface micromachining [J].

Loechel, B .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2000, 10 (02) :108-115

[10]

Hydrogenated poly(p-vinylphenol) for microlithography [J].

Matsumoto, T ;

Akaho, M ;

Noguchi, T ;

Otsu, K ;

Matsukami, T ;

Kaneko, M .

INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, 1996, 35 (07) :2414-2419

← 1 2 →