Aqueous base development and acid diffusion length optimization in negative epoxy resist for electron beam lithography

被引：10

作者：

Glezos, N ^{[1
]}

Argitis, P

Velessiotis, D

Raptis, I

Hatzakis, M

Hudek, P

Kostic, I

机构：

[1] NCSR Demokritos, Inst Microelect, IMEL, Aghia Paraskevi 15310, Greece

[2] Slovak Acad Sci, Inst Informat, SK-84237 Bratislava, Slovakia

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期

关键词：

D O I：

10.1116/1.1324615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new aqueous base developable, chemically amplified negative resist based on epoxy chemistry is evaluated for high-resolution, high-speed e-beam lithography. This resist is formulated using partially hydrogenated poly(hydroxy styrene) and epoxy novolac polymers. Degree of hydrogenation controls the aqueous base solubility and microphase separation phenomena. Reduction of edge roughness compared to the pure epoxy systems is observed whereas the absence of swelling phenomena allows lithography up to 100 nm regime and a sensitivity of 4-8 muC/cm(2) at 50 keV. The diffusion coefficient has been evaluated both from high-resolution line and dot exposures and it is found to be 5X10(-14) cm(2)/s for the optimal thermal processing conditions selected. (C) 2000 American Vacuum Society. [S0734-211X(00)15806-8].

引用

页码：3431 / 3434

页数：4

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