Low temperature synthesis of aligned carbon nanotubes by inductively coupled plasma chemical vapor deposition using pure methane

被引：23

作者：

Honda, S ^{[1
]}

Katayama, M ^{[1
]}

Lee, KY ^{[1
]}

Ikuno, T ^{[1
]}

Ohkura, S ^{[1
]}

Oura, K ^{[1
]}

Furuta, H ^{[1
]}

Hirao, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Grad Sch Engn, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 4B期

关键词：

carbon nanotube; inductively coupled plasma; chemical vapor deposition; low-temperature process; pure methane; hydrogen;

D O I：

10.1143/JJAP.42.L441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Inductively coupled plasma chemical vapor deposition combined with substrate biasing using pure methane was applied to low-temperature synthesis of carbon nanotubes. We found that the resultant carbon nanotubes were crystalline even at a growth temperature of 500degreesC. The growth mechanism of the crystallized carbon nanotubes was discussed in terms of the moderate etching of carbon deposit by hydrogen species dissociated from methane in inductively coupled plasma.

引用

页码：L441 / L443

页数：3

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