Proton migration mechanism for the instability of organic field-effect transistors

被引：50

作者：

Sharma, A. ^{[1
]}

Mathijssen, S. G. J. ^{[1
,2
]}

Kemerink, M. ^{[1
]}

de Leeuw, D. M. ^{[2
]}

Bobbert, P. A. ^{[1
]}

机构：

[1] Tech Univ Eindhoven, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 25期

关键词：

THIN-FILM TRANSISTORS; AMORPHOUS-SILICON; BIAS-STRESS; SHIFTS;

D O I：

10.1063/1.3275807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on hole-assisted production of protons in the accumulation layer and their subsequent migration into the gate dielectric. This model explains the much debated role of water and several other hitherto unexplained aspects of the instability of these transistors. (C) 2009 American Institute of Physics. [doi:10.1063/1.3275807]

引用

页数：3

共 21 条

[1] Effect of active layer thickness on bias stress effect in pentacene thin-film transistors [J].

Chang, Josephine B. ;

Subramanian, Vivek .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[2] DEFECT RELAXATION IN AMORPHOUS-SILICON - STRETCHED EXPONENTIALS, THE MEYER-NELDEL RULE, AND THE STAEBLER-WRONSKI EFFECT [J].

CRANDALL, RS .

PHYSICAL REVIEW B, 1991, 43 (05) :4057-4070

[3] Proton diffusion mechanism in amorphous SiO2 [J].

Godet, Julien ;

Pasquarello, Alfredo .

PHYSICAL REVIEW LETTERS, 2006, 97 (15)

[4] Bias-induced threshold voltages shifts in thin-film organic transistors [J].

Gomes, HL ;

Stallinga, P ;

Dinelli, F ;

Murgia, M ;

Biscarini, F ;

de Leeuw, DM ;

Muck, T ;

Geurts, J ;

Molenkamp, LW ;

Wagner, V .

APPLIED PHYSICS LETTERS, 2004, 84 (16) :3184-3186

[5] Organic small molecule field-effect transistors with Cytop™ gate dielectric:: Eliminating gate bias stress effects [J].

Kalb, W. L. ;

Mathis, T. ;

Haas, S. ;

Stassen, A. F. ;

Batlogg, B. .

APPLIED PHYSICS LETTERS, 2007, 90 (09)

[6] Charge trapping at the dielectric of organic transistors visualized in real time and space [J].

Mathijssen, Simon G. J. ;

Kemerink, Martijn ;

Sharma, Abhinav ;

Coelle, Michael ;

Bobbert, Peter A. ;

Janssen, Rene A. J. ;

de Leeuw, Dago M. .

ADVANCED MATERIALS, 2008, 20 (05) :975-+

[7] Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors [J].

Mathijssen, Simon G. J. ;

Colle, Michael ;

Gomes, Henrique ;

Smits, Edsger C. P. ;

de Boer, Bert ;

McCulloch, Iain ;

Bobbert, Peter A. ;

de Leeuw, Dago M. .

ADVANCED MATERIALS, 2007, 19 (19) :2785-+

[8] Bias-stress induced instability of organic thin film transistors [J].

Matters, M ;

de Leeuw, DM ;

Herwig, PT ;

Brown, AR .

SYNTHETIC METALS, 1999, 102 (1-3) :998-999

[9] Transport and reactions in doped conjugated polymers: Electrochemical processes and organic devices [J].

Paasch, Gernot .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2007, 600 (01) :131-141

[10] Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors [J].

Salleo, A ;

Endicott, F ;

Street, RA .

APPLIED PHYSICS LETTERS, 2005, 86 (26) :1-3

← 1 2 3 →