Charge trapping at the dielectric of organic transistors visualized in real time and space

被引：144

作者：

Mathijssen, Simon G. J. ^{[1
,2
]}

Kemerink, Martijn ^{[1
]}

Sharma, Abhinav ^{[1
]}

Coelle, Michael ^{[3
]}

Bobbert, Peter A. ^{[1
]}

Janssen, Rene A. J. ^{[1
]}

de Leeuw, Dago M. ^{[2
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[3] Merck Chem, Southampton SO16 7QD, Hants, England

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 05期

关键词：

D O I：

10.1002/adma.200702688

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).

引用

页码：975 / +

页数：6

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