Boron Diffusion with Boric Acid for High Efficiency Silicon Solar Cells

被引:24
作者
Das, A. [1 ]
Kim, D. S. [1 ]
Nakayashiki, K. [1 ]
Rounsaville, B. [1 ]
Meemongkolkiat, V. [1 ]
Rohatgi, A. [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
All Open Access; Bronze;
D O I
10.1149/1.3392364
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A boron diffusion process using boric acid as a low cost, nontoxic spin-on source is introduced. Using dilute solutions of boric acid, sheet resistances ranging from 20 to 200 Omega/square were achieved, along with saturation current densities as low as 85 fA/cm(2). These results indicate that boric acid is a suitable source for forming both p(+) emitters and back surface fields for high efficiency n- and p-type solar cells. The degradation of the minority carrier bulk lifetime, which is a common efficiency-limiting characteristic of low cost boron sources, was also minimized through the use of a high purity boric acid source. The ability to achieve low sheet resistances, high bulk lifetimes and low saturation current densities with boric acid were exploited to achieve a 19.7% efficient screen printed solar cell exhibiting a bulk lifetime >400 mu s. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3392364] All rights reserved.
引用
收藏
页码:H684 / H687
页数:4
相关论文
共 19 条
[1]   INTERFACE REACTION OF B2O3-SI SYSTEM AND BORON DIFFUSION INTO SILICON [J].
ARAI, E ;
TERUNUMA, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) :980-987
[2]   NUMERICAL MODELING OF TEXTURED SILICON SOLAR-CELLS USING PC-1D [J].
BASORE, PA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (02) :337-343
[3]  
Bueno G., 2005, Proc. 20th EU-PVSEC, P1458
[4]   Optical and Electrical Characterization of Silver Microflake Colloid Films [J].
Das, A. ;
Rohatgi, A. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (03) :H301-H303
[5]  
Ebong A. U., 1996, P 25 IEEE PHOT SPEC, P513
[6]  
Kane D.E., 1985, PROC 18 IEEE PHOTOVO, P578
[7]   STUDIES OF DIFFUSED BORON EMITTERS - SATURATION CURRENT, BANDGAP NARROWING, AND SURFACE RECOMBINATION VELOCITY [J].
KING, RR ;
SWANSON, RM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) :1399-1409
[8]  
KING RR, 1991, P 22 IEEE PHOT SPEC, P229
[9]  
Lachiq A, 1996, PROG PHOTOVOLTAICS, V4, P329, DOI 10.1002/(SICI)1099-159X(199609/10)4:5<329::AID-PIP131>3.0.CO
[10]  
2-0